abb switzerland ltd, semiconductors reserves the right to change specifications without notice. v rrm = 400 v i favm = 13526 a i frms = 21247 a i fsm = 85000 a v f0 = 0.758 v r f = 0.021 m w doc. no. 5sya1179-00 march 07 high forward current capability low forward and reverse recovery losses high current application up to 2000 hz for parallel connection, please contact factory blocking v rrm repetitive peak reverse voltage 400 v half sine waveform, f = 50 hz t j = -40...180 c i rrm repetitive peak reverse current 75 ma v r = v rrm mechanical f m mounting force 35..70 kn m weight 0.14 kg d s surface creepage distance 2 mm d a air strike distance 2 mm fig. 1 outline drawing. all dimensions are in millimeters and represent nominal values unless stated otherwise. housingless welding diode 5sdd 0135z0400 preliminary
5sdd 0135z0400 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. page 2 of 6 doc. no. 5sya1179-00 march 07 on-state i favm max. average on-state current 13526 a t c = 85 c half sine pulse i frms max. rms on-state current 21247 a t c = 85 c half sine pulse 91000 a t p = 8.3 ms i fsm max. peak non-repetitive surge current 85000 a t p = 10 ms v r =0 v half sine pulse 34200 ka 2 s t p = 8.3 ms i 2 dt max. surge current integral 36100 ka 2 s t p = 10 ms v r =0 v half sine pulse 0.920 v i f = 8000 a v f max max. on-state voltage 0.970 v i f = 10000 a v f0 max. threshold voltage 0.758 v r f max. slope resistance 0.021 m w i f = 10 000?30 000 a qrr typ. recovered charge 600 c i f = 1 000 a, di/dt = -30 a/s, v r = 100 v unless otherwise specified t j = 180 c thermal characteristics t j operating junction temperature range -40...180 c t stg storage temperature range -40...180 c 5.2 k/kw anode side cooled 15.1 k/kw cathode side cooled r th(j-c) thermal resistance junction to case 3.9 k/kw double side cooled 4.7 k/kw anode side cooled r th(c-h) thermal resistance case to heatsink 5.8 k/kw cathode side cooled 2.6 k/kw double side cooled
5sdd 0135z0400 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. page 3 of 6 doc. no. 5sya1179-00 march 07 ( ) ) e - (1 r = (t) z 4 1 i / t - c - j th i ? = i t i 1 2 3 4 r i (k/kw) 2.6480 0.8700 0.2200 0.1500 t i (s) 0.0454 0.0255 0.0041 0.0006 conditions: f m = 35 +5/-0 kn, double side cooled 0 1 2 3 4 0,0001 0,001 0,01 0,1 1 square wave pulse duration t d ( s ) t r a n s i e n t t h e r m a l i m p e d a n c e j u n c t i o n t o c a s e z t h j c ( k / k w ) correction for periodic waveforms 180 sine: 0.9 k/kw 120 sine: 1.2 k/kw 60 sine: 2.2 k/kw 180 rectangular: 0.8 k/kw 120 rectangular: 1.2 k/kw 60 rectangular: 2.2 k/kw fig. 2 transient thermal impedance (junction-to-case) vs. time in analytical and graphical forms.
5sdd 0135z0400 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. page 4 of 6 doc. no. 5sya1179-00 march 07 on-state characteristics surge current characteristics 0 5000 10000 15000 20000 25000 30000 35000 0 0,5 1 1,5 2 v f ( v ) i f ( a ) 25 c t j = 180 c 0 50 100 150 200 1 10 100 t ( ms ) i f s m ( k a ) 0 10 20 30 40 50 60 70 80 i 2 d t ( 1 0 6 a 2 s ) i fsm i 2 dt fig. 3 forward current vs. forward voltage (max. values). fig. 4 surge forward current vs. pulse length, half sine wave, single pulse, v r = 0 v, t j = t jmax surge current characteristics forward power loss 0 10 20 30 40 50 60 70 80 90 1 10 100 number n of cycles at 50 hz i f s m ( k a ) v r = 0 v v r 0.5 v rrm 0 5000 10000 15000 20000 25000 0 4000 8000 12000 16000 i fav ( a ) p t ( w ) 120 180 dc y = 60 fig. 5 surge forward current vs. number of pulses, half sine wave, t j = t jmax fig. 6 forward power loss vs. average forward current, sine waveform, f = 50 hz, t = 1/f
5sdd 0135z0400 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. page 5 of 6 doc. no. 5sya1179-00 march 07 forward power loss 0 5000 10000 15000 20000 25000 0 4000 8000 12000 16000 i fav ( a ) p t ( w ) y = 30 60 90 120 180 270 dc 60 80 100 120 140 160 180 0 4000 8000 12000 16000 i fav ( a ) t c ( c ) 180 120 dc y = 60 fig. 7 forward power loss vs. average forward current, square waveform, f = 50 hz, t = 1/f fig. 8 forward power loss vs. average forward current, sine waveform, f = 50 hz, t = 1/f 60 80 100 120 140 160 180 0 4000 8000 12000 16000 i fav ( a ) t c ( c ) 180 dc 270 120 90 60 y = 30 fig. 9 max. case temperature vs. aver. forward current, square waveform, f = 50 hz, t = 1/f
5sdd 0135z0400 abb switzerland ltd, semiconductors reserves the right to change specifications without notice. abb switzerland ltd semiconductors fabrikstrasse 3 ch-5600 lenzburg, switzerland telephone +41 (0)58 586 1419 fax +41 (0)58 586 1306 email abbsem@ch.abb.com internet www.abb.com/semiconductors doc. no. 5sya1179-00 march 07
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